PART |
Description |
Maker |
P2148H P2148H-2 P2148H-3 P2148HL P2148HL-3 D2148HL |
x4 SRAM x4SRAM
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CY101E484-4DC CY101E484-4KC CY101E484-4YC CY101E48 |
x4SRAM
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CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100 2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM 32K x 8 SRAM SRAM MEMORY ARRAY SRAM 静态存储器
|
ETC AUSTIN[Austin Semiconductor] Electronic Theatre Controls, Inc.
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
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GSI Technology, Inc.
|
M48T08 M48T0807 M48T08Y M48T18 |
64Kb (8K x 8) TIMEKEEPER SRAM(64KTIMEKEEPER SRAM) 64Kb的(8K的8)计时器的SRAM4K的位计时器的SRAM 5V, 64Kbit (8 Kb x 8) TIMEKEEPER? SRAM 5V, 64Kbit (8 Kb x 8) TIMEKEEPER庐 SRAM
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STMicroelectronics N.V. 意法半导
|
DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D |
2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 16K Nonovolatile SRAM From old datasheet system
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Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] http://
|
M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns 128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns)) 128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 128K X 8 STANDARD SRAM, 20 ns, CDFP32
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White Electronic Designs Corporation White Electronic Designs, Corp.
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