| PART |
Description |
Maker |
| SIGC121T120R2C |
IGBTs - HV Chips - SIGC121T120R2C, 1200V, 75A
|
Infineon
|
| SIGC223T120R2CS |
IGBTs - HV Chips - SIGC223T120R2CS, 1200V, 150A
|
Infineon
|
| SIGC109T120R3L |
IGBTs - HV Chips - SIGC109T120R3L, 1200V, 100A
|
Infineon
|
| SIGC109T120R3 |
IGBTs - HV Chips - SIGC109T120R3, 1200V, 100A
|
Infineon
|
| SIGC18T60NC |
IGBTs - HV Chips - SIGC18T60NC, 600V, 20A
|
Infineon
|
| SIGC156T120R2C BSM100GD120DN2 ECONOPACK3 Q67041-A4 |
IGBTs - HV Chips - SIGC156T120R2C, 1200V, 100A
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| HGTD6N40E1 HGTD6N50E1S HGTD6N40E1S HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs
6A 400V and 500V N-Channel IGBTs
6A, 400V and 500V N-Channel IGBTs 7.5 A, 500 V, N-CHANNEL IGBT, TO-252AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
