PART |
Description |
Maker |
A63L7332 A63L7332E-42 A63L7332E-45 A63L7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 4.2ns 128K x 32bit synchronous high speed SRAM 4.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology Corporation
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W24L010A W24L010A-10 W24L010A-12 W24L010A-15 W24L0 |
From old datasheet system Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
|
WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
|
KM68V1002CI |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
AT28C010E-12JC AT28C010E-12PC AT28C010E-12TI AT28C |
1 Megabit 128K x 8 Paged CMOS E2PROM Quadruple Bilateral Analog Switch 14-SOIC -40 to 85 High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PDIP32 Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PQCC32 High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PQCC32 64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 5V, 200 ns, PDSO32 High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 120 ns, PDIP32 Quadruple Bilateral Analog Switch 14-SSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PDSO32
|
Atmel Corp. Atmel, Corp.
|
IDT70T3719MS133BBG IDT70T3719MS133BBGI IDT70T3719M |
HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 72 DUAL-PORT SRAM, 15 ns, PBGA324
|
Integrated Device Technology, Inc.
|
IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV |
128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Toshiba, Corp. Linear Technology, Corp. Electronic Theatre Controls, Inc. ICSI[Integrated Circuit Solution Inc]
|
KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围 128K X 8 STANDARD SRAM, 20 ns, PDSO32 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
V61C3181024 |
128K X 8 HIGH SPEED STATIC RAM
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM RES CH 68.1 EW 1% ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Electronic Theatre Controls, Inc. ICSI Integrated Circuit Solution Inc
|
KM681001B KM681001B-15 KM681001B-20 |
From old datasheet system 128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. 128K x 8 Bit High-Speed CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|