PART |
Description |
Maker |
NTP7N40-D |
Power MOSFET 7 Amps, 400 Volts N-Channel TO-220
|
ON Semiconductor
|
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) 18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
NTD6N40/D NTD6N40-D |
Power MOSFET 6 Amps, 400 Volts N-Channel DPAK Power MOSFET 6 Amps400 Volts
|
ON Semiconductor
|
NGD18N40CLB NGD18N40CLBT4 |
From old datasheet system Ignition IGBT 18 Amps, 400 Volts Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)
|
http:// ON Semiconductor ONSEMI
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
SDR1004UF |
100 AMPS ULTRA FAST RECOVERY RECTIFIER 400- 1000 VOLTS 100 A, 400 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc. Solid States Devices, Inc
|
2SK2029-01L 2SK2029-01S |
Spinnaker DC Fan; Operating Voltage: 24 Volts; Voltage Range: 12 - 28 Volts; Power Supply: 30.0 Watts; Line Current: 1.25 Amps; Locked Rotor Current 2.00 Amps; Nominal Speed: 2500 RPM N-CHANNEL MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
SDA165GUF SDA165DUF SDA165EUF SDA165FUF |
10 AMPS 400 - 1000 VOLTS ULTRAFAST RECOVERY SINGLE PHASE BRIDGE
|
SSDI[Solid States Devices, Inc]
|
SDR1004 SDR1010 SDR1008 SDR1006 |
100 amps ultra fast recovery rectifier 400-1000 volts
|
SSDI[Solid States Devices, Inc]
|
CS55BZ CS55DZ |
Leaded Thyristor SCR SILICON CONTROLLED RECTIFIER 0.8 AMPS, 200 AND 400 VOLTS
|
CENTRAL[Central Semiconductor Corp]
|