PART |
Description |
Maker |
AD8512ARMZ AD8510ARMZ-REEL AD8510BR AD8510ARZ AD85 |
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier (Dual); No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8 Precision, Very Low Noise, Low Input Bias Current
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Analog Devices, Inc.
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K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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AD8674ARUZ AD8674ARZ AD8674AR-REEL AD8674AR-REEL7 |
Dual Precision Very Low Noise Low Input Bias Current Operational Amplifier Quad Precision Very Low Noise Low Input Bias Current Operational Amplifier
|
Analog Devices
|
K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85 Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
MAX4238ATTT MAX4239ATTT MAX4239AUT-T MAX4239AUT/VT |
Ultra-Low Offset/Drift, Low-Noise,Precision SOT23 Amplifiers
|
Maxim Integrated Products
|
AD8652ARZ-REEL7 AD8651ARMZ-R2 AD8651ARMZ-REEL AD86 |
50 MHz, Precision, Low Distortion, Low Noise CMOS Amplifiers
|
Analog Devices
|
LT1236AILS8-5 LT1236ALS8 LT1236BILS8-5 LT1236LS8 L |
Precision, Low Noise, Low Profile Hermetic Voltage Reference
|
Linear Technology
|
AD795JR-REEL7 AD795JR-REEL |
Low Power Low Noise Precision FET Op Amp
|
Analog Devices
|
ISL21007 ISL21007BFB812Z ISL21007BFB825Z ISL21007C |
Precision, Low Noise FGA Voltage References Precision, Low Noise FGA⑩ Voltage References
|
Intersil Corporation
|
AD861006 AD8610ARMZ-R2 AD8610ARMZ-REEL AD8620AR-RE |
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier
|
Analog Devices
|
UDZ10B UDZ11B UDZ16B UDZ18B UDZ20B UDZ22B UDZ24B U |
Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极 20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor SURFACE MOUNT PRECISION ZENER DIODE Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
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Diodes, Inc. Diodes Inc. Rohm DIODES[Diodes Incorporated]
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