| PART |
Description |
Maker |
| DMG1012UW-7 |
1000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET GREEN, PLASTIC PACKAGE-3
N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes, Inc.
Diodes Incorporated
|
| IXFH12N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.05Ω的N沟道增强型HiPerFET功率MOSFET) 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| NTR1P02T3G |
Power MOSFET -20 V, -1 A, P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| IXTH14N100 |
Discrete MOSFETs: Standard N-channel Types
MegaMOSTMFET 14 A, 1000 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SK3000 |
1000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon N Channel MOS FET Low Frequency Power Switching
|
Renesas Electronics Corporation
|
| SDF12N100GAFEHSN |
12 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SOLITRON DEVICES INC
|
| SKM191 |
28 A, 1000 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SEMIKRON INTERNATIONAL
|
| BSM191/F |
28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| MCH3301 |
1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| STW13NK100Z |
13 A, 1000 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
STMICROELECTRONICS
|
| APT1001R6SLL |
8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-2
|
Microsemi, Corp.
|
|
