PART |
Description |
Maker |
15MPA0566 |
11.0-19.0 GHz GaAs MMIC Power Amplifier 11000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MIMIX[Mimix Broadband]
|
2SA1979M |
PNP Silicon Transistor (Medium power amplifier)
|
AUK[AUK corp]
|
MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc. Agilent (Hewlett-Packard)
|
CHA3080-98F-15 |
71-76GHz Medium Power Amplifier 71-76GHz Medium Power Amplifier
|
United Monolithic Semic...
|
BGA6489 |
MMIC wideband medium power amplifier MMIC wideband medium power amplifier
|
NXP Semiconductors
|
PA1220 |
800-1000 MHz. Low Noise High Dynamic Range Linear Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
Tyco Electronics
|
2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SA1979M |
Medium power amplifier
|
KODENSHI KOREA CORP.
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
??『绉???′唤?????? UNISONIC TECHNOLOGIES CO LTD Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
AH101 AH101-PCB |
JT 41C 41#20 SKT RECP 中功率,高线性放大器 Circular Connector; No. of Contacts:79; Series:MS27472; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No Medium Power/ High Linearity Amplifier Medium Power, High Linearity Amplifier
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List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC[ETC] WJ Communications
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