| PART |
Description |
Maker |
| IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
| STD5NB20 6365 |
N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET
From old datasheet system
N - CHANNEL 200V - 0.70 - 5A DPAK PowerMESH TM MOSFET
N - CHANNEL 200V - 0.70 Ohm - 5A DPAK PowerMESH MOSFET
|
STMicroelectronics
SGS Thomson Microelectronics
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| IRFU9220 IRFR9220 IRFR9220TRR IRFR9220PBF IRFR9220 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-200V Single P-Channel HEXFET Power MOSFET in a D-Pak package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A)
3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
VISHAY INTERTECHNOLOGY INC
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001 |
200V N-Channel B-FET / Substitute of IRFI630A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD18N20V2 FQU18N20V2 FQD18N20V2TF FQD18N20V2TM FQ |
200V N-Channel Advanced QFET V2 series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF650 IRF650B IRFS650B IRF650BFP001 |
200V N-Channel B-FET / Substitute of IRF650A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
