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BUL45D2G - High Speed, High Gain Bipolar NPN Power Transistor

BUL45D2G_4775581.PDF Datasheet

 
Part No. BUL45D2G
Description High Speed, High Gain Bipolar NPN Power Transistor

File Size 225.65K  /  11 Page  

Maker


ON Semiconductor



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(CHINA HK & SZ)
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Part: BUL45D2
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Pack: TO-220
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Unit price for :
    50: $0.47
  100: $0.44
1000: $0.42

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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
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