| PART |
Description |
Maker |
| M6MGT647M17AKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| S71WS512NB0BAEZZ0 S71WS512NB0BAEZZ2 S71WS512N80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt 堆叠式多芯片产品（MCP）的闪存和移动存储芯片的CMOS 1.8伏特
|
Spansion Inc.
Spansion, Inc.
|
| S71WS-N S71WS512NB0BFWYP3 S71WS512NB0BAWAP3 S71WS5 |
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
|
Spansion Inc.
Spansion, Inc.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| IBM0325404CT3A-75A IBM03254B4CT3A-75A IBM0325804CT |
x16 SDRAM
x8 SDRAM x8 SDRAM内存
x4 SDRAM Module x4内存模块
|
Electronic Theatre Controls, Inc.
Hanbit Electronics Co., Ltd.
|
| UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 |
x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
|
NEC, Corp.
Infineon Technologies AG
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT- |
DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC
|
Hynix Semiconductor
http://
|
| S71WS512ND0BAWAN3 S71WS512ND0BAWAP0 S71WS256ND0BAW |
Stacked Multi-Chip Product (MCP)
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
|
http://
SPANSION[SPANSION]
Spansion, Inc.
|
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
