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ACE632 - The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ACE632_4748426.PDF Datasheet

 
Part No. ACE632
Description The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 947.24K  /  11 Page  

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ACE Technology Co., LTD.



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Part: ACE1001EN
Maker: Fairchild Semiconductor
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ACE632 The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
ACE Technology Co., LTD.
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