| PART |
Description |
Maker |
| NTE5825 NTE5818 NTE5819 NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
|
NTE[NTE Electronics]
|
| FTD182 |
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DIODE TRIO DELCO TYPE Repetitive Peak Reverse Voltage VRRM 200
|
FCI connector
First Components International
|
| SRF1020111111 SR1050 SR1060 SRF10A0 SRF1080 SR1020 |
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A.
Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 10.0 A.
|
Shanghai Sunrise Electronics
CHENYI[Shanghai Lunsure Electronic Tech]
Chenyi Electronics
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| BT236-D BT2.6-D |
600V Vdrm 6A Triac, 1.6V Peak On-State Voltage, 1.0mA Repetitive Peak Off-State Current
Sensitive Gate Triacs
|
SEMIWELL[SemiWell Semiconductor]
|
| BT138F-600 BT138F |
600V Vdrm 12A Triac, 1.65V Peak On-State Voltage, 2.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
| CDBM280 CDBM260 CDBM2100 CDBM240 |
2.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V.
SMD Schottky Barrier Rectifier 贴片肖特基整流器
|
Comchip Technology Co., Ltd.
|
| 2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N60 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
Motorola
|
| HTX4-600 |
Repetitive Peak Off-State Voltage: 600V
|
SemiHow Co.,Ltd.
|
| ASS-ASC |
Surface Mount Auto Surge Suppressor Working Peak Reverse Voltage - 3 to Volts 10000 Watt Peak Pulse Power
|
StarHope
|
| IRFSL4229PBF |
High Repetitive Peak Current Capability for Reliable Operation
|
International Rectifier
|
| 1N3070 1N3070TR |
Maximum Repetitive Reverse Voltage
Small Signal Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
