| PART |
Description |
Maker |
| STD25NF10 STD25NF10T4 |
N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V 0.033 OHM 25A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL MOSFET
|
STMicroelectronics
ST Microelectronics
|
| UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10L-TA3-T UT |
25A, 100V P-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRF9150 |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
Samsung semiconductor
International Rectifier
Intersil Corporation
|
| IRFP9150 FN2293 |
25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil Corporation
Samsung semiconductor
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V
N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| HUF75645P3 HUF75645S3S HUF75645P3NL HUF75645S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 75A条（丁）|63AB
75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TRANSISTOR,MOSFET
75A, 100V, 0.014 Ohm, N-Channel, UltraFETPower MOSFETs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| SBT250-10JS |
100V, 25A Rectifi er
|
Sanyo Semicon Device
|
| B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五（无线资源管理）|5A我（翻译
|
SCHURTER AG
|
