| PART |
Description |
Maker |
| MMBT9014G-X-AE3-R MMBT901411 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
|
Unisonic Technologies
|
| MMBT9015L-X-AE3-R MMBT9015G-X-AE3-R MMBT901511 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
|
Unisonic Technologies
|
| 2SK30ATM E001523 |
From old datasheet system
LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTE1223 |
Integrated Circuit Low Noise High Gain Pre−Amplifier Circuit For General Purpose Audio Pre−Amplifiers
|
NTE Electronics
|
| 2N5833 FTSO5831 FTSO5833 FTSO5830 FTSO5961 |
NPN small signal high voltage general purpose amplifier.
NPN low level low noise amplifier.
|
Fairchild Semiconductor
|
| 2N5088 |
NPN LOW LEVEL LOW NOISE HIGH GAIN AMPLIFIER
|
New Jersey Semi-Conductor Products, Inc.
|
| AN360 |
Low Noise Pre-Amplifier Circuit
|
PANASONIC[Panasonic Semiconductor]
|
| 2N4250A 2N4250 2N4248 2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-106
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| PMN28UN PMN28UN-01 |
N-channel TrenchMOS ultra low level FET N沟道TrenchMOS超低电平场效应管
PT 30C 1#16,29#20 SKT PLUG
TrenchMOS⑩ ultra low level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BCV71 BCV72 BCW71 BCW72 |
EPITAXIAL PLANAR NPN TRANSISTOR (LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| MS6901 MS6901MGTR MS6901MGU |
Mono 1.1W Power Amplifier Selectable Shutdown Logic Level Low Voltage Operation
|
MOSA ELECTRONICS
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
