| PART |
Description |
Maker |
| VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Semiconductors
Vishay Siliconix
|
| ST280CH06C0 ST280CH04C1 |
Silicon Controlled Rectifier, 1130 A, 400 V, SCR, TO-200AB, EPUK-2
Silicon Controlled Rectifier, 1130 A, 600 V, SCR, TO-200AB, EPUK-2
600V 500A Phase Control SCR in a TO-200AA (A-Puk) package
|
Vishay Semiconductors
International Rectifier
|
| BT152F-600 BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| IRKH41-12 IRKH41-14 |
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| TYN1004 TYN804 |
V(drm): 1000V; silicon controlled rectifier (SCR)
V(drm): 800V; silicon controlled rectifier (SCR)
|
SGS Thomson Microelectronics
|
| CPA80A12AA4-12FC CPAT45A12AA4-12FC CPA250V2AA4-12F |
SILICON CONTROLLED SWITCH ADD-A-PAK
3 PHASE, 400 A, SILICON, RECTIFIER DIODE
SCR
3 PHASE, 1000 A, SILICON, RECTIFIER DIODE
|
|
| BY527 BY527_1 |
Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| S2060C S2061D |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V.
4A sensitive-gate silicon controlled rectifier. Vrsxm 500V.
|
General Electric Solid State
|
| BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE
1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MCR649AP-9 MCR649AP-3 MCR649AP-4 MCR649AP-8 MCR649 |
SILICON CONTROLLED RECTIFIER
|
Digitron Semiconductors
|
|
