| PART |
Description |
Maker |
| STL7DN6LF3 |
Automotive-grade dual N-channel 60 V
|
STMicroelectronics
|
| SQ4282EY |
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| DS3882 DS3882E DS3882ER DS3882ET |
Dual-Channel Automotive CCFL Controller
|
Maxim Integrated Products
|
| SQJ960EP |
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| SQ9945BEY-15 |
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| SQJ941EP |
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| SQ4946AEY |
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| AUIRF7343QTR |
Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package
|
International Rectifier
|
| IDT7025L55G IDT7025S IDT7025S17PFB IDT7025L17PFB I |
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel
280V N-Channel MOSFET; ; No of Pins: 3; Container: Rail 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
250V N-Channel MOSFET; ; No of Pins: 3; Container: Rail 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
|
Integrated Device Techn...
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technolog...
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| SQJB90EP |
Automotive Dual N-Channel 80 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
