| PART |
Description |
Maker |
| 160PFT100A 160PFT160 160PFT120A 160PFT140 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR
|
International Rectifier
|
| 2N877 |
SCR, V(DRM) < 50 V
|
New Jersey Semi-Conductor Products, Inc.
|
| 150PFT200 150PFT250 |
V(rrm/drm): 2000V; 800A I(tgq) gate turn-off hockey puk SCR
V(rrm/drm): 2500V; 800A I(tgq) gate turn-off hockey puk SCR
|
International Rectifier
|
| 2N3653 |
SCR, V(DRM) = 400V TO 499.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4187 |
SCR, V(DRM) = 300V TO 399.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| L4006L9 L6004L9 L201E7 |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口T）的有效值|20
TRIAC|200V V(DRM)|1A I(T)RMS|TO-92 可控硅| 200伏五（DRM）的| 1A条口（T）的有效值|2
|
Boca Semiconductor, Corp.
|
| TLS106-4 TLS106 |
SENSITIVE GATE SCR
SILICON CONTROLLED RECTIFIER,400V V(DRM),4A I(T),TO-221VAR
|
STMicroelectronics
Toshiba Semiconductor
|
| Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五（DRM）的| 8A条口（T）的有效值| TO - 220AB现有
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五（DRM）的| 8A条口T）的有效值| TO - 220AB现有
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五（DRM）的| 4A条口（T）的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp.
Littelfuse, Inc.
|
| BT151S BT151S-500L BT151S-500R BT151S-650L BT151S- |
SCR
Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| IPT240 I3PT430 ISPT640 IPT130 |
TRIAC|200V V(DRM)|40A I(T)RMS|PRESS-19
TRIAC|400V V(DRM)|30A I(T)RMS|FBASE-R-HW30 可控硅| 400V五（DRM）的| 30A条口（T）的有效值| FBASE受体- HW30
TRIAC|600V V(DRM)|40A I(T)RMS|IST-3RT-1/4 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|北京时间- 3RT - 1 / 4
TRIAC|100V V(DRM)|30A I(T)RMS|PRESS-19
|
Electronic Theatre Controls, Inc.
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
|
