| PART |
Description |
Maker |
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| 5082-2207 50822207 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
Advanced Semiconductor, Inc.
|
| BAS3005B-02V |
Medium Power AF Schottky Diode
|
Infineon Technologies AG
|
| BAT760 BAT76013 |
Medium power Schottky barrier single diode
|
NXP Semiconductors
|
| DME2333-230 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
Analog Devices, Inc.
|
| MADS-001339-1279OT MA4E1339 MA4E1339A1-1141TSOT-23 |
SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE
Silicon Medium Barrier Schottky Diodes`
|
MACOM[Tyco Electronics]
|
| 5082-2209 |
SCHOTTKY MEDIUM BARRIER DIODE
|
ASI[Advanced Semiconductor]
|
| MA40051E |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| BAT165 Q62702-A1190 BAT165Q62702A1190 |
CY8C24123A CY8C24223A, CY8C24423A PSoC® Mixed-Signal Array
Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
