PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
4MBI400VG-060R-50 |
IGBT MODULE (V series) 600V / 400A / IGBT, RB-IGBT 4 in one package
|
Fuji Electric
|
FZ1200R17KE3 |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
FZ1200R12KL4C |
IGBT-Wechselrichter / IGBT-inverter IGBT Power Module
|
eupec GmbH
|
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
CPV364MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
2MBI75UA-120 |
100 A, 1200 V, N-CHANNEL IGBT IGBT Module U-Series 1200V / 75A 2 in one-package
|
FUJI ELECTRIC CO LTD List of Unclassifed Manufacturers
|
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
FD1600R17KF6CB2 |
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
|
Infineon Technologies AG
|