PART |
Description |
Maker |
CNS7106-D1C |
High Power Broadband Noise Sources 200 kHz to 12 MHz
|
Micronetics, Inc.
|
NMA2516-1T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
NMA2516-2T |
High Power Broadband Noise Sources 7800 MHz to 8500 MHz
|
Micronetics, Inc.
|
NMA5111-B1T |
High Power Broadband Noise Sources 1000 MHz to 2000 MHz
|
Micronetics, Inc.
|
NMA5110-A1M |
High Power Broadband Noise Sources 300 MHz to 1000 MHz
|
Micronetics, Inc.
|
NMA2512-2T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
Q62702-F1382 BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器) NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
|
BFS481 Q62702-F1572 |
From old datasheet system NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at collector currents from 0.5 to 12 mA) NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
MAX3524 MAX3524EVB |
Low-Noise, High-Linearity Broadband Amplifier 4.75 to 5.25 V, low-noise, high-linearity broadband amplifier
|
MAXIM - Dallas Semiconductor
|
LA6018N4220 LA4080N3520 LA4080N3523 LA4080N2820 LA |
Broadband Low Noise Medium Power Amplifiers
|
American Accurate Components, Inc.
|
BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
Q62702-F1086 BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
|
SIEMENS[Siemens Semiconductor Group]
|