| PART |
Description |
Maker |
| KMA2D0DP20X |
TSOP-6 PACKAGE
|
KEC(Korea Electronics)
|
| KMA6D0P20X |
TSOP-6 PACKAGE
|
KEC(Korea Electronics)
|
| V54C3128804VS V54C3128404VS V54C3128804VT |
128Mbit SDRAM 3.3 VOLT/ TSOP II / SOC PACKAGE 8M X 16/ 16M X 8/ 32M X 4
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 128Mbit SDRAM.3伏，第二的TSOP / SOC的包米1616米x 82 × 4
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| AK18D300-TSOP AK14D300-TSOP AK20D300-TSOP |
Thin Small Outline Package TSOP DIP Adapters
|
ACCUTEK MICROCIRCUIT CORPORATION
ACCUTEK MICROCIRCUIT CORPOR...
ACCUTEK MICROCIRCUIT CO...
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| IRF5810TR |
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
|
International Rectifier
|
| V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR
|
Panasonic Semiconductor
Panasonic Corporation
|
| IRLMS2002 IRLMS2002TR |
Ultra Low On-Resistance
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY14B101MA-ZSP25XIT CY14B101MA-ZSP45XI |
1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock; Organization: 64Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: TSOP
64K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54
|
CYPRESS SEMICONDUCTOR CORP
|
| IRF5800 IRF5800TR IRF580003 |
Ultra Low On-Resistance, P-Channel MOSFET
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
|
International Rectifier
|
