| PART |
Description |
Maker |
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| NTE7154 |
Integrated Circuit Control Circuit for Switch Mode Power Supplies using MOS Transistors
|
NTE[NTE Electronics]
|
| TC59S6404 TC59S6404BFT TC59S6404BFT-10 TC59S6404BF |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC59S6404BFT/BFTL-80 TC59S6416BFT/BFTL-80 TC59S640 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM 1048576 / 2097152 / 4194304 - WORDSx4BANKSx16 / 8/4-BIT s同步动态随机存储器
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Han 16A Kunststoff-Abdeckkappe RoHS Compliant: NA
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| UPD16601 UPD16601N UPD16601N-XXX |
MOS Integrated Circuit
|
NEC
|
| UPD72873 UPD72873GC-YEB |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD16707P PD16707 UPD16707 |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD784214A07 784218A 784214AY 784217A 784217AY |
MOS INTEGRATED CIRCUIT
|
NEC
|
| UPD720100A UPD720100AGM-8ED UPD720100AGM-8EY UPD72 |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
