| PART |
Description |
Maker |
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| 1N3157A 1N3154 1N3154-1 1N3154A 1N3155 1N3155A 1N3 |
8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
0TC Reference Voltage Zener; Package: DO-7; Power (W): 0.5; ZZT (Ohms): 15; IR (µA): 10; Tol (%): 5; 8.4 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
Zener Voltage Regulator Diode
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 10EDA40 |
DIODE 0.9 A, 400 V, SILICON, SIGNAL DIODE
Low Forward Voltage drop Diode
|
Nihon Inter Electronics, Corp.
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| Q62705-K151 KPY33-R |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 相对硅压阻压力传感器
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| LM236H-5.0/NOPB |
LM136-5.0 LM236-5.0 LM336-5.0 5.0V Reference Diode; Package: TO-46; No of Pins: 3; Qty per Container: 1000/Box 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 5 V, MBCY3
|
HIROSE ELECTRIC Co., Ltd.
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| LSM115J |
1 Amp Ultra Low Forward Voltage Schottky Diode 1 A, 15 V, SILICON, SIGNAL DIODE, DO-214BA
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| 31DQ03L |
Versatile Miniature Switch, High Performance 3 A, 30 V, SILICON, RECTIFIER DIODE
Extremely Low Forward Voltage drop Diode
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| 1N3802B 1N3819A 1N3819B 1N3800 1N3804B 1N3797B 1N3 |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35
Diode 100V 275A 2-Pin DO-9
Diode Zener Single 6.7V 5% 400mW 2-Pin DO-7
|
New Jersey Semiconductors
|
