| PART |
Description |
Maker |
| TLP1251C5 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP1253C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP1017 TLP1016 E006222 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC
From old datasheet system
|
Toshiba Semiconductor
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
|
