| PART |
Description |
Maker |
| SFD251H |
Crossed-Field Amplifier
|
Communications & Power Industries, Inc.
|
| SKY13354-368LF-EVB |
0.1 to 3.0 GHz Dual SPDT Crossed Switch
|
Skyworks Solutions Inc.
|
| 2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| NJ132L |
Silicon Junction Field-Effect Transistor Low-Noise Amplifier
|
INTERFET[InterFET Corporation]
|
| NJ26L |
Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier
|
INTERFET[InterFET Corporation]
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| NE350184C NE350184C-T1A NE350184C-T1 NE350184C-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
CEL
|
| 2SJ74 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
