| PART |
Description |
Maker |
| HMC818LP4E |
GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| HMC564LC409 |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 7 - 14 GHz
|
Hittite Microwave Corporation
|
| HMC565LC509 |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz
|
Hittite Microwave Corporation
|
| HMC618LP3 HMC618LP3E 618LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
|
Hittite Microwave Corporation
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC965LP5E |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR
|
Hittite Microwave Corporation
|
| 368LP4E |
SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9 - 16 GHz OUTPUT
|
Hittite Microwave Corporation
|
| HMC965LP5E HMC965LP5E11 |
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz
|
Hittite Microwave Corporation
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| LP1500P100 |
PACKAGED 1W POWER PHEMT
KU BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
|
| HMC5805LS6 |
GaAs pHEMT MMIC
|
Hittite Microwave
|
