PART |
Description |
Maker |
DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DN500F |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
|
Siemens Semiconductor G... Diotec Elektronische Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
ASM3P2853A ASM3P2853A_V0.7 ASM3P2853AF-08-ST ASM3P |
Peak EMI Reducing Solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
ALSC[Alliance Semiconductor Corporation]
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|