| PART |
Description |
Maker |
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| SFF9240M |
-11 AMP -200 VOLTS 0.50 ohm P-Channel Power MOSFET 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254
|
Solid State Devices, Inc.
|
| AP9120GH-HF AP9120GJ-HF AP9120GH-HF-14 AP9120GJ-HF |
8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower On-resistance
Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| OM6414SP3 |
4 A, 200 V, 0.18 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, SIP-18
|
Samwha Electronics
|
| 2N7000-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
| IRFF230 2N6798LCC4-JQR-B 2N6798LCC4-JQR-A |
N-CHANNEL ENHANCEMENT
5.5 A, 200 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF HERMETIC SEALED, METAL, TO-39, 3 PIN
|
Seme LAB
TT electronics Semelab, Ltd.
|
| AP18N20GH-HF AP18N20GJ-HF AP18N20GH-HF-14 AP18N20G |
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| MCH6601 |
200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRF9540 RF1S9540SM FN2282 |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
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