PART |
Description |
Maker |
THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 2097152 WORDS x 32 BIT DYNAMIC RAM MODULE 2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE 2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
UPB419C UPB419D |
16384 BIT BIPOLAR TTL
|
NEC
|
UPD2716 |
16384 Bit UV Erasable PROM
|
NEC
|
UPB409C UPB409D UPB429C UPB429D |
16384 BIT BIPOLAR TTL
|
NEC
|
HM48416AP |
16384 word x 4 Bit Dynamic RAM
|
Hitachi Semiconductor
|
M5L2716K |
16384-Bit Reasable and Electrically Reprogrammable ROM
|
Mitsubishi Electric
|
MB7137H-SK MB7137E MB7137E-SK MB7137H MB7138E MB71 |
PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
AM27S45A |
(AM27S45 / AM27S47 (A/SA)) 16384-Bit Bipolar Registered PROM
|
AMD
|
THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns 4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
|
Hynix Semiconductor
|
|