PART |
Description |
Maker |
IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
M16C26A-SC |
Standard Characteristics
|
Renesas Electronics Corporation
|
754607 |
Standard Characteristics
|
Renesas Electronics Corporation
|
3850A08 |
(QzROM version) Standard Characteristics
|
Renesas Electronics Corporation
|
GRM0335C1E560JA01 GRM0335C1E560JA01W GRM0335C1E560 |
Temperature characteristics (complied standard)
|
Murata Manufacturing Co...
|
38D2-FMV |
Standard Characteristics (Flash Memory Version)
|
Renesas Electronics Corporation
|
KMD6D0DN40Q |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
|
KEC(Korea Electronics)
|
CRCC1206 |
Choice of Dielectric Characteristics (X7R or Y5U), Wraparound Termination, Thick Film R/C Element, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability, Standard Size
|
Vishay
|
P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32 16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52 128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32 64K X 1 STANDARD SRAM, 10 ns, PDIP22 1K X 4 STANDARD SRAM, 10 ns, PDIP18 128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Performance Semiconductor, Corp. Pyramid Semiconductor, Corp. PERFORMANCE SEMICONDUCTOR CORP PYRAMID SEMICONDUCTOR CORP
|
MB4015NSC-3 |
Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20隆?C, RH=65%) Electrical Characteristics Test Condition (Vs= 2 . 0 V, RL= 2 . 2 k ohm, Ta=20°C, RH=65%)
|
Knowles Electronics
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