PART |
Description |
Maker |
STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的) N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω,N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS(击穿电40伏,10Ω沟道增强型垂直的DMOS结构场效应管 N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??) N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
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Elan Microelectronics, Corp. ELAN Microelctronics Corp .
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STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
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意法半导 STMicro
|
CMLDM7002A CMLDM7002AJ |
SMD Small Signal Mosfet Dual N-Channel Enhancement Mode SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
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CENTRAL[Central Semiconductor Corp]
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LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 |
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD 10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD 10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L SOIC
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http:// ICE Components, Inc. ICE COMPONENTS INC
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MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system P-CHANNEL ENHANCEMENT?ODE P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
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MOTOROLA[Motorola, Inc] ON Semiconductor
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STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-CHANNEL Power MOSFET PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
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STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
|
ZVN4310G |
SOT223 N-CHANNEL ENHANCEMENT N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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Zetex Semiconductors http://
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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STP60NE03L-10 5467 |
PC 26C 26#20 PIN RECP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 From old datasheet system M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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