PART |
Description |
Maker |
UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD
|
USHA India LTD
|
MJW16212 ON2060 |
Power 10A 650V NPN POWER TRANSISTOR From old datasheet system High and Very High Resolution Monitors
|
ON Semiconductor http://
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IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR HIGH POWER NPN TRANSISTOR From old datasheet system HIGH VOLTAGE NPN POWER TRANSISTOR 8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS) From old datasheet system HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
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TOSHIBA[Toshiba Semiconductor]
|
MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
TA0012 |
New High Power, High Efficiency HBT GSM Power Amplifier
|
RFMD[RF Micro Devices]
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
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