| PART |
Description |
Maker |
| HMC713MS8 HMC713MS8E |
54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz
|
Hittite Microwave Corporation
|
| PE42821 |
UltraCMOS? SPDT RF Switch 100 - 2700 MHz
|
Peregrine Semiconductor
|
| CGHV27100 CGHV27100F CGHV27100-TB CGHV27100F-AMP |
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
|
Cree, Inc
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
| SFRC9130S.5B |
10 AMP /100 Volts 300 mRadiation Tolerant P-Channel MOSFET 10 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
| SUP90N10-09 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| ZX10-4-11 ZX10-4-14 ZX10-4-19 ZX10-4-24 ZX10-4-27 |
Power Splitters/Combiners 4 Way-0∑ 50з 800 to 2700 MHz
Power Splitters/Combiners 4 Way-0 50 800 to 2700 MHz
|
MINI[Mini-Circuits]
|
|
