PART |
Description |
Maker |
HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB 35A/ 1200V/ NPT Series N-Channel IGBT 35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, NPT N-Channel IGBT
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
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TOSHIBA[Toshiba Semiconductor]
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HGTG18N120BN FN4518 |
54 A, 1200 V, N-CHANNEL IGBT, TO-247 CAT6A RISER, YELLOW, SPOOBULK CABLE From old datasheet system 54A, 1200V, NPT Series N-Channel IGBT 54A/ 1200V/ NPT Series N-Channel IGBT
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB From old datasheet system N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
RJH60D3DPE-00-J3 RJH60D3DPE |
30 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3 Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA Ultrafast IGBT Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
ISL9V5036S3SNL ISL9V5036P3F085 |
360V EcoSPARK 500mJ N-Channel Ignition IGBT 46 A, 420 V, N-CHANNEL IGBT, TO-263AB ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
|
Fairchild Semiconductor, Corp.
|
MG150J1BS11 E002085 |
Silicon N channel IGBT(N娌??缁?????????朵?绠? From old datasheet system N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) Silicon N channel IGBT(N沟道绝缘栅双极型晶体
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Toshiba Semiconductor Toshiba Corporation
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HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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