| PART |
Description |
Maker |
| CY62137FV18LL-55BVXI CY62137FV18LL-55BVXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
| CY62136EV30LL-45BVXI CY62136EV30LL-45BVXIT CY62136 |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
| CY62137FV30LL-45ZSXAT CY62137FV30LL-55ZSXE |
Automotive 2-Mbit (128 K 16) Static RAM
|
Cypress
|
| CY62136FV30 CY62136FV30LL-45ZSXA |
2-Mbit (128 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY7C109D-10ZXI CY7C1009D-10VXI CY7C109D-10VXI |
1-Mbit (128 K × 8) Static RAM Low active power
|
Cypress Semiconductor
|
| CY7C1019D-10ZSXI CY7C1019D-10VXI |
1-Mbit (128 K × 8) Static RAM CMOS for optimum speed/power
|
Cypress Semiconductor
|
| CY62126EV30 CY62126EV30LL CY62126EV30LL-45ZSXI CY6 |
1-Mbit (64 K x 16) Static RAM Automatic power down when deselected
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| CY62147DV30 CY62147DV30LL-70ZSXI CY62147DV30L CY62 |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44
4-Mbit (256K x 16) Static RAM 4兆位56K × 16）静态RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
