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W9712G6JB - 2M × 4 BANKS × 16 BIT DDR2 SDRAM

W9712G6JB_4462267.PDF Datasheet


 Full text search : 2M × 4 BANKS × 16 BIT DDR2 SDRAM


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Winbond
W972GG6JB W972GG6JB-25 16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
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Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
W981616AH W981616AHB1 512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
Winbond Electronics
MT48LC16M16A2P-75DTR SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
Micron Technology
MT48LC32M16A2P-75ITC SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
Micron Technology
SSTUA32866EC-G 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-667 RDIMM applications
NXP Semiconductors
SSTUB32866EC/G SSTUB32866EC/S 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications
NXP Semiconductors
SSTUP32866EC_G SSTUP32866EC_S SSTUP32866EC/G SSTUP 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity and programmable output for DDR2-800 RDIMMs
NXP Semiconductors
SSTUH32866EC_G SSTUH32866 SSTUH32866EC SSTUH32866E 1.8 V high output drive 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2 RDIMM applications
Philips
NXP Semiconductors N.V.
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF 512-Mbit DDR2 SDRAM
512Mbit Double Data Rate (DDR2) Component
Infineon Technologies A...
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ATMEL Corporation
 
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W9712G6JB siemens W9712G6JB mosfet W9712G6JB zener W9712G6JB easy-on W9712G6JB Collector
 

 

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