| PART |
Description |
Maker |
| PST593DM PST592C PST592CM PST591JM PST591H PST591H |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7901D1 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7752 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7301 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7303 with Lead Free Packaging
200V Dual N-Channel Digital Audio HEXFET Power MOSFET in a TO-220 Full-Pak(Iso) package.; A IRFI4020H-117P with Standard Packaging 电压检测器
Voltage Detector 电压检测器
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9956 with Standard Packaging 电压检测器
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9952 with Lead Free Packaging 电压检测器
|
NXP Semiconductors N.V.
Intersil, Corp.
|
| FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDS8958A10 FDS8958A FDS8958AF085 |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench MOSFET
7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FDS9934C FDS9934CNL |
Dual N- and P-Channel enhancement mode power field effect transistors 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
20V Complementary PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRF7311TR IRF7311TRPBF |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
| IRF5850 IRF5850TR |
2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
Ultra Low On-Resistance
|
International Rectifier
|
| APTM10DUM05TG10 |
Dual common source MOSFET Power Module 278 A, 100 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi Corporation
Microsemi, Corp.
|
| APTM10TDUM09PG |
Triple dual common source MOSFET Power Module 139 A, 100 V, 0.01 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTM20DUM08TG |
Dual common source MOSFET Power Module 208 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
Advanced Power Technology
|
| APTM100DUM90G |
Dual Common Source MOSFET Power Module 78 A, 1000 V, 0.105 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTM120DSK57T3 |
17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Dual Buck chopper MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
|
