| PART |
Description |
Maker |
| NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
| NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
| NTE102A |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE[NTE Electronics]
|
| BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system
10 AMPERE COMPLEMENTARY
Darlington Complementary Silicon Power Transistors
|
Motorola Inc
ON Semiconductor
Motorola, Inc
|
| MJH6287 MJH6284 ON2053 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
20 AMPERE COMPLEMENTARY SILICON
|
ONSEMI[ON Semiconductor]
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| OA1154 |
GERMANIUM DIODE
|
BK
|
| 1N2929 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
| 1N3717 1N3718 1N3719 1N3720 |
Germanium Diodes
|
New Jersey Semi-Conductor Products, Inc.
|
| 1N3712-21 |
Germanium Diodes
|
New Jersey Semi-Conductor P...
|
| 1N4502 |
GERMANIUM DIODE
|
New Jersey Semi-Conductor Products, Inc.
|
