PART |
Description |
Maker |
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
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Cypress Semiconductor Corp.
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CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟TM架构 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18)流水线的SRAM的总线延迟,TM架构
|
Cypress Semiconductor Corp.
|
CY62157EV18LL-55BVXI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor, Corp.
|
CY7C1049CV33-15VXE |
4 Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 3.0 to 3.6 V; 512K X 8 STANDARD SRAM, 15 ns, PDSO36
|
Cypress Semiconductor, Corp.
|
CY7C1380D |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM(18-Mb (512K x 36/1M x 18)管道式SRAM) 18兆位(为512k × 36/1M × 18)流水线的SRAM18 - MB的(12k × 36/1M × 18)管道式的SRAM
|
Cypress Semiconductor Corp.
|
CY7C1387D-250AXC CY7C1386D-167BGC CY7C1386D-167BGX |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1460AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
SST29VF010-70-4C-NH SST29SF010-70-4C-NH SST29SF040 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512千位/ 1兆位/ 2 4兆位(8)小部门闪光
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Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC Elektron Technology PLC Silicon Storage Technology, Inc.
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CY7C1370DV25 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)管道式SRAM(NoBL结构 18兆位(为512k × 36/1M × 18)与总线延迟建筑18 MB的(12k × 36/1M × 18)管道式静态存储器(总线延迟结构)流水线的SRAM
|
Cypress Semiconductor Corp.
|