| PART |
Description |
Maker |
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KSC3073 |
Power Amplifier Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB688 |
HIGH POWER AMPLIFIER APPLICATION
|
UTC
|
| 2SJ31307 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SJ44007 2SJ440 |
Audio Frequency Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications
|
TOSHIBA
|
| Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SK2013 E001420 |
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
From old datasheet system
|
Toshiba
|
| GT20D101 E001910 |
From old datasheet system
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
