PART |
Description |
Maker |
TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP SWITCHMODE Series PNP Silicon Power Transistors Power 8A 350V Discrete PNP
|
ON Semiconductor
|
ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z) Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z) NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes List of Unclassifed Manufacturers
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0632-3 00; No. of Positions: 30; Connector Type Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263
|
NEC Corp.
|
RFSP2020 PRFS-P2020-005 PRFS-P2020-006 PRFS-P2020- |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... Single-band power amplifiers 2.4-2.5 GHz Power Amplifier
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
FMPA2151 |
2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
|
Fairchild Semiconductor
|
1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies UHV240-KH/AS PTSA 0.5/ 9-2.5-Z Discrete POWER & Signal Technologies 分立功率 1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器(功500瓦的瞬变电压抑制器) 1500 Watt Transient Voltage Suppressors(???500???????靛?????? Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. http://
|
8TQ080S 8TQ100S 8TQ 8TQ10 8TQ100STRR 8TQ080STRR |
16 A SPDT MINIATURE POWER RELAY SCHOTTKY RECTIFIER 100V 8A Schottky Discrete Diode in a D2-Pak package 80V 8A Schottky Discrete Diode in a D2-Pak package
|
IRF[International Rectifier]
|