| PART |
Description |
Maker |
| GS8182Q18D-200 GS8182Q18D-200I GS8182Q18D-167 GS81 |
18Mb Burst of 2 SigmaQuad-II SRAM
|
GSI[GSI Technology]
|
| GS8180D18D-250I GS8180D18D-200 GS8180D18D-200I GS8 |
18Mb Burst of 4 SigmaQuad SRAM
|
GSI[GSI Technology]
|
| GS8342D07BD-300I GS8342D07BD-333I GS8342D07BD-350 |
JEDEC-standard pinout and package
36Mb SigmaQuad-II TM Burst of 4 SRAM
Simultaneous Read and Write SigmaQuad Interface
|
GSI Technology
|
| GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS816 |
6ns 512K x 32 18MB synchronous burst SRAM
8.5ns 1M x 18 18MB synchronous burst SRAM
8.5ns 512K x 36 18MB synchronous burst SRAM
8.5ns 512K x 32 18MB synchronous burst SRAM
|
GSI Technology
|
| GS8342Q36E-300 GS8342Q08E-200 GS8342Q08GE-200I GS8 |
36Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS81302DT19AGD-450 GS81302DT19AGD-450I GS81302DT19 |
144Mb SigmaQuad-II TM Burst of 4 SRAM
JEDEC-standard pinout and package
|
GSI Technology
|
| IDT71P74804 IDT71P74804S167BQ IDT71P74804S200BQ ID |
18Mb Pipelined QDR II SRAM Burst of 4
|
Integrated Device Technology
|
| IDTIDT71P71604167BQ IDTIDT71P71604200BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SRAM Burst of 2
|
Integrated Device Technology
|
| IDTIDT71P79204167BQ IDTIDT71P79204250BQ IDTIDT71P7 |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2 35.7流水线⑩二二氧化硅的DDR SRAM的爆
|
Integrated Device Technology, Inc.
|
| IS61DDP2B41M18A IS61DDP2B451236A/A1/A2 IS61DDP2B41 |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
