| PART |
Description |
Maker |
| S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Advanced Micro Devices, Inc.
Spansion, Inc.
http://
|
| W25X32A |
32M-BIT SERIAL FLASH MEMORY
|
Winbond
|
| MX25L3235EZNI10G MX25L3235EM2I10G MX25L3235EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| FM25Q32 |
32M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI
|
FIDELIX
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
| W25P10-VNI W25P10-VSNI W25P10-VNIG W25P20-VNI W25P |
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
4 Mbit Uniform Sector, Serial Flash Memory
|
Winbond Electronics Corp
|
| W25X32VSSIZ W25X32VZEIZ W25X16VDAIG |
4 Mbit Uniform Sector, Serial Flash Memory 32M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory 16M X 1 FLASH 2.7V PROM, PDIP8
|
Winbond Electronics, Corp.
|
| MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| MBM29F033C-90 MBM29F033C-90PTN MBM29F033C-90PTR MB |
FLASH MEMORY 32M (4M x 8) BIT
|
Fujitsu Microelectronics
|
