| PART |
Description |
Maker |
| HL7852G |
GaAlAs Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| SLD105VL |
GaAlAs Laser Diode For Portable CD(镓铝砷激光二极管(用于随身CD)) 发动器激光二极管便携CD（镓铝砷激光二极管（用于随身光盘）
|
Sony, Corp.
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| 1A440 |
VCSEL(Vertical Cavity Surface-Emitting) Laser Diode(用于光纤通道，吉位以太网，ATM的垂直空腔表面辐射激光二极管) VCSEL（垂直腔表面发射）激光二极管（用于光纤通道，吉位以太网，自动取款机的垂直空腔表面辐射激光二极管
VCSEL Laser Diode(Datacom General Purpose)
VCSEL Laser Diode(Datacom/ General Purpose)
VCSEL Laser Diode(Datacom, General Purpose) VCSEL激光二极管（数据通信，通用
|
Mitel Networks Corporat...
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
