| PART |
Description |
Maker |
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| FDMS2572 |
N-Channel UltraFET Trench MOSFET 27 A, 150 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| SFL3200/39 SFL3200-39 |
Logic Level 12A 150V .17N-Channel Power MOSFET 9.3 A, 150 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| FQA36P15 |
150V P-Channel MOSFET 36 A, 150 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
150V P-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| 2SK2098-01MR 2SK2098 |
N-channel MOS-FET 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK1085-M |
N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| GWM160-0055X1-BL |
150 A, 55 V, 0.0033 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| FDMC86240 |
4.6 A, 150 V, 0.051 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
