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MTP6N60E-D - TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate

MTP6N60E-D_4373235.PDF Datasheet


 Full text search : TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
 Product Description search : TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate


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TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆
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