| PART |
Description |
Maker |
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| S29CL016J0JDGH014 S29CL016J0JDGH037 S29CL016J0MDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 3.3V PROM, 54 ns, UUC74
|
Spansion, Inc.
SPANSION LLC
|
| AM29LV800BT80WBC AM29LV800BT70RWBC AM29LV800BT90WB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 80 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 80 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 80 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
http://
Advanced Micro Devices, Inc.
|
| 33C408 33C408RPFI-30 33C408RTFI-30 33C408RTFB-25 3 |
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 25 ns, DFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP32
4 Megabit (512K x 8-Bit) CMOS SRAM 512K X 8 STANDARD SRAM, 30 ns, DFP32
|
http://
Maxwell Technologies, Inc
|
| 79C2040RPFK-20 79C2040 79C2040RPFE-15 79C2040RPFE- |
20 Megabit (512K x 40-Bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
| 33C408RPFB20 33C408RPFB30 33C408RPFS20 33C408RPFS2 |
4-megabit (512K x 8-bit) CMOS SRAM
|
Maxwell Technologies
|
| 33C408RTFS-30 33C408 33C408RPFB-20 33C408RPFB-25 3 |
4 Megabit (512K x 8-Bit) CMOS SRAM
|
MAXWELL[Maxwell Technologies]
|
| AT28C040 AT28C040-20 AT28C040-20BC AT28C040-20BI A |
Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85 512K X 8 EEPROM 5V, 200 ns, CDIP32
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85
Octal Buffers/Drivers With 3-State Outputs 20-TVSOP -40 to 85
Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85
Low-Power, Dual Supply, Level Translating CompactFlash Interface With 16-Bit Data, 11-Bit Address 114-BGA MICROSTAR -40 to 85
4-Megabit 512K x 8 Paged E2PROM
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
x8 Flash EEPROM x8闪存EEPROM
x8/x16 Flash EEPROM
|
Atmel, Corp.
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
