PART |
Description |
Maker |
IRF7311TR IRF7311TRPBF |
Generation V Technology 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET technology, Ultra Low On-Resistance, P-Channel MOSFET generation v technology
|
International Rectifier
|
IRF7404TRPBF |
generation v technology
|
International Rectifier
|
IRF7311PBF IRF7311PBF-15 |
GENERATION V TECHNOLOGY
|
International Rectifier
|
V23990-K420-A60-0B-PM V23990-K420-A60-0A-PM V23990 |
Mitsubishi Generation 6.1 technology
|
Vincotech
|
SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
IRF9952PBF IRF9952TRPBF |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
IRF7314PBF IRF7314TRPBF IRF7314PBF-15 |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
IRF7313PBF IRF7313TRPBF IRF7313PBF-15 |
HEXFET Power MOSFET Generation V Technology
|
IRF[International Rectifier]
|
KRF7379 |
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge
|
TY Semiconductor Co., Ltd
|
SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|