PART |
Description |
Maker |
HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY |
4M x 4 Bit 2k 5 V 60 ns FPM DRAM 4M x 4 Bit 4k 5 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM -4M x 4-Bit Dynamic RAM 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM 2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode) 2M x 8-Bit Dynamic RAM From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
|
AS4C4M4 |
16M FPM DRAM
|
Austin Semiconductor
|
HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HY |
4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns 4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns -3.3V 4M x 4-Bit Dynamic RAM
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
|
Samsung Electronic Samsung semiconductor
|
THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块) 16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered 8M x 72-Bit EDO- DRAM Module (ECC - Module) 8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168 8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group SIEMENS AG Infineon Technologies AG
|