PART |
Description |
Maker |
MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc Freescale Semiconductor, In...
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NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
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IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
MRF6S21100NR1 MRF6S21100NBR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
MRF21125 MRF21125R3 MRF21125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF141 |
RF FIELD-EFFECT POWER TRANSISTOR
|
Advanced Semiconductor
|
MRF8S19260HR6 MRF8S19260HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF187 MRF187R3 MRF187SR3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|